Characterization of atmospheric aerosols using Synchroton radiation total reflection X-ray fluorescence and Fe K-edge total reflection X-ray fluorescence-X-ray absorption near-edge structure

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Synchrotron radiation-induced total reflection X-ray fluorescence (SR-TXRF) analysis is a high sensitive analytical technique that offers limits of detection in the femtogram range for most elements. Besides the analytical aspect, SR-TXRF is mainly used in combination with angle-dependent measurements and/or X-ray absorption near-edge structure (XANES) spectroscopy to gain additional informatio...

Parameter study of self-absorption effects in Total Reflection X-ray Fluorescence–X-ray Absorption Near Edge Structure analysis of arsenic☆

Polarized X-ray Absorption near Edge Structure

Polarized measurements of oriented single crystals can be used to simplify the interpretation of X-ray absorption near edge structure (XANES) spectra by permitting a direct determination of the symmetry properties of a particular transition. We have utilized this technique to study the XANES spectra for several first-row transition metal complexes. Applications to the weak, ls+3d transition, to...

X-ray Absorption Spectroscopy Using X–ray Fluorescence Spectrometer

Strong characteristic Kα X-ray lines are accompanied by weak lines due to the radiative Auger effect (RAE) [1, 2]. The characteristic Kα fluorescent X-rays (K-L2,3 lines) are emitted by the 2p→1s electric dipole transition after one of the 1s electron photoionization, Though the probability is less than 0.01, one of the 2p electrons is excited into an unoccupied discrete or continuum level simu...

Synchrotron Radiation Total Reflection X-ray Fluorescence - Spectroscopy for Microcontamination Analysis on Silicon Wafer Surfaces

As dimensions in state-of-the-art CMOS devices shrink to less than 0.1 pm, even low levels of impurities on wafer surfaces can cause device degradation. Conventionally, metal contamination on wafer surfaces is measured using Total Reflection X-Ray Fluorescence Spectroscopy (TXRF). However, commercially available TXRF systems do not have the necessary sensitivity for measuring the lower levels o...